Part Number Hot Search : 
N611216 MSD61A4 68HC7 TES510C US890 HYB31 MB90075 LTC222
Product Description
Full Text Search

APT54GA60B - High Speed PT IGBT

APT54GA60B_4522363.PDF Datasheet


 Full text search : High Speed PT IGBT


 Related Part Number
PART Description Maker
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
IXYS, Corp.
IXYS[IXYS Corporation]
IXGH50N60B2 IXGT50N60B2 IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
IXYS Corporation
MG150Q2YS65H IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
Toshiba Semiconductor
Toshiba Corporation
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
IXYS, Corp.
IXYS[IXYS Corporation]
BUP202 Q67078-A4401-A2 BUP202SMD IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
IXGC16N60C2 IXGC16N60C2D1 HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
IXYS
IXGN50N120C3H1 High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
IXYS Corporation
BUP306D Q67040-A4222-A2 BUP306-D IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
GA200NS61U 600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package
High Side Switch Chopper Module Ultra-Fast Speed IGBT
IRF[International Rectifier]
AUIRS2112S The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
International Rectifier
APT46GA90JD40 High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
Microsemi Corporation
Microsemi, Corp.
 
 Related keyword From Full Text Search System
APT54GA60B 应用线路 APT54GA60B Amp APT54GA60B Silicon APT54GA60B Technolog APT54GA60B npn
APT54GA60B DATASHEET PDF APT54GA60B prezzo baumer APT54GA60B single APT54GA60B Ic-on-line APT54GA60B power suppiy
 

 

Price & Availability of APT54GA60B

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.74006295204163